Перегляд за автором "Ataubaeva, A.B."

Сортувати за: Порядок: Результатів:

  • Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...